VLSI fabrication principles: Silicon and Gallium Arsenide/ Sorab K. Ghandhi
Material type:
TextLanguage: English Publication details: New Delhi: John Wiley & Sons, 1994Edition: 2nd edDescription: xxiv, 834 pages: diagrams; 23 cmISBN: - 9788126517909
- 621.38173 G411
| Item type | Current library | Call number | Status | Date due | Barcode | Item holds | |
|---|---|---|---|---|---|---|---|
| Books | ISI Library, Kolkata | 621.38173 G411 (Browse shelf(Opens below)) | Available | C27728 |
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| 621.38173 En58 Process and device modeling | 621.38173 Es74 Magnetic bubble technology | 621.38173 G411 VLSI fabrication principles | 621.38173 G411 VLSI fabrication principles: Silicon and Gallium Arsenide/ | 621.38173 G548 Integrated circuit engineering | 621.38173 G781 Analysis and design of analog integrated circuits | 621.38173 G788 Analog integrated circuits |
Includes bibliography and index
Material Properties -- Phase Diagrams and Solid Solubility -- Crystal Growth and Doping -- Diffusion -- Epitaxy -- Ion Implantation -- Native Films -- Deposited Films -- Etching and Cleaning -- Lithographic Processes -- Device and Circuit Fabrication -- The Mathematics of Diffusion
Fully updated with the latest technologies, this edition covers the fundamental principles underlying fabrication processes for semiconductor devices along with integrated circuits made from silicon and gallium arsenide. Stresses fabrication criteria for such circuits as CMOS, bipolar, MOS, FET, etc. These diverse technologies are introduced separately and then consolidated into complete circuits. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
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