TY  - BOOK
AU  - Ghandhi,Sorab K.
TI  - VLSI fabrication principles: Silicon and Gallium Arsenide
SN  - 9788126517909
U1  - 621.38173 
PY  - 1994///
CY  - New Delhi
PB  - John Wiley & Sons
KW  - Semiconductors
N1  - Includes bibliography and index; Material Properties -- Phase Diagrams and Solid Solubility -- Crystal Growth and Doping -- Diffusion -- Epitaxy -- Ion Implantation -- Native Films -- Deposited Films -- Etching and Cleaning -- Lithographic Processes -- Device and Circuit Fabrication -- The Mathematics of Diffusion
N2  - Fully updated with the latest technologies, this edition covers the fundamental principles underlying fabrication processes for semiconductor devices along with integrated circuits made from silicon and gallium arsenide. Stresses fabrication criteria for such circuits as CMOS, bipolar, MOS, FET, etc. These diverse technologies are introduced separately and then consolidated into complete circuits. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department
ER  -